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Issue: Vol. 3 No. 101 (2025)
Section: Articles
Date Published: 27/03/2026
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Pham, T. T., & Le, T. T. T. (2026). Study of the optical properties and energy transfer process in Eu3+ ion-doped ZnO semiconductor quantum dots. Scientific Journal of Saigon University, 3(101), 76-88. https://sj.sgu.edu.vn/index.php/sjsgu/article/view/411

Study of the optical properties and energy transfer process in Eu3+ ion-doped ZnO semiconductor quantum dots

Thi Thuy Pham1, , Thi Thanh Thuy Le1
1 Saigon University

Main Article Content

Abstract

In this study, Eu³⁺-doped ZnO quantum dots with concentrations ranging from 0.5 to 4.0 mol% were synthesized by the co-precipitation method in aqueous medium. The structure and composition of the materials were studied by X-ray diffraction and energy dispersive X-ray spectroscopy, which showed that the obtained quantum dots had a wurtzite structure and Eu³⁺ was successfully doped into the ZnO crystal lattice. The UV–Vis absorption spectrum showed a red shift of the absorption peak with increasing Eu³⁺ concentration, reflecting a slight decrease in the band gap. The photoluminescence spectrum recorded narrow lines characteristic of Eu³⁺ ions. The photoluminescence lifetime (τ) measurements showed a gradual decrease of the average τ with increasing doping concentration, consistent with the mechanism of energy transfer and non-radiative quenching between Eu³⁺ ions. The mechanism of energy transfer from ZnO substrate to Eu³⁺ ions is analyzed, clarifying the role of ZnO as an efficient absorber and energy transfer source for the 4f internal emission levels of Eu³⁺. These results confirm the potential application of ZnO:Eu³⁺ in luminescent devices, displays and optical sensors.

Keywords

quantum dots, Eu³⁺, ZnO, optical properties, energy transfer.

Article Details

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